Plasmon-enhanced organic solar cells with solution-processed three-dimensional Ag nanosheets
Identifieur interne : 000704 ( Main/Repository ); précédent : 000703; suivant : 000705Plasmon-enhanced organic solar cells with solution-processed three-dimensional Ag nanosheets
Auteurs : RBID : Pascal:13-0093587Descripteurs français
- Pascal (Inist)
- Plasmon surface, Cellule solaire organique, Méthode en solution, Modèle 3 dimensions, Miroir, Evaluation performance, Epaisseur, Couche ITO, Addition étain, Tension circuit ouvert, Courant court circuit, Facteur remplissage, Conversion énergie, Taux conversion, Organe commande, Couche active, Exciton, Cellule solaire, Argent, Oxyde d'indium, Styrènesulfonate polymère, Thiophène dérivé polymère, Mélange polymère, Ester, Acide butyrique, Composé du fullerène, Fluorure de lithium, ITO, LiF, Nanofeuille.
- Wicri :
- concept : Argent.
English descriptors
- KwdEn :
- Active layer, Butyric acid, Control device, Conversion rate, Energy conversion, Ester, Exciton, Fill factor, Fullerene compounds, Growth from solution, ITO layers, Indium oxide, Lithium fluoride, Mirror, Nanosheet, Open circuit voltage, Organic solar cells, Performance evaluation, Polymer blends, Short circuit currents, Silver, Solar cell, Styrenesulfonate polymer, Surface plasmon, Thickness, Thiophene derivative polymer, Three dimensional model, Tin addition.
Abstract
The silver nanosheets (AgNSs) prepared via normal silver mirror reaction were used to improve the performance of organic solar cells. AgNSs with a size of about 100 nm in width and 10 nm in thickness formed a 3-D network on an indium tin oxide (ITO) surface. Organic solar cells with a structure of ITO/ AgNSs/poly(3,4-ethylene dioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/poly(3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC61BM)/LiF/Al exhibited an open circuit voltage (Voc) of 0.60 ±0.01 V, short circuit current density (Jsc) of 11.16±0.08 mA/cm2, a fill factor (FF) of 53.69 ± 0.92%, and power conversion efficiency (PCE) of 3.60 ± 0.06%. The PCEs of organic solar cells with 3-D AgNSs layers were 1.29 times that of the control device without 3-D AgNSs layer. We attributed the improvement of the efficiency to localized surface plasmon resonance (LSPR) induced by the 3-D network of AgNSs, which enhanced the light harvest of active layers, increased the probability of exciton generation and dissociation.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 001241
Links to Exploration step
Pascal:13-0093587Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Plasmon-enhanced organic solar cells with solution-processed three-dimensional Ag nanosheets</title><author><name>CHUNYUMA</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education) and School of Materials Science and Engineering, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300384</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tianjin Key Lab for Photoelectric Materials and Devices</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin Key Lab for Photoelectric Materials and Devices</wicri:noRegion></affiliation></author><author><name>WENJING QIN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education) and School of Materials Science and Engineering, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300384</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tianjin Key Lab for Photoelectric Materials and Devices</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin Key Lab for Photoelectric Materials and Devices</wicri:noRegion></affiliation></author><author><name>XINRUI XU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education) and School of Materials Science and Engineering, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300384</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tianjin Key Lab for Photoelectric Materials and Devices</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin Key Lab for Photoelectric Materials and Devices</wicri:noRegion></affiliation></author><author><name>MINGYANG LI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education) and School of Materials Science and Engineering, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300384</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tianjin Key Lab for Photoelectric Materials and Devices</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin Key Lab for Photoelectric Materials and Devices</wicri:noRegion></affiliation></author><author><name>XUESONG HAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education) and School of Materials Science and Engineering, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300384</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tianjin Key Lab for Photoelectric Materials and Devices</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin Key Lab for Photoelectric Materials and Devices</wicri:noRegion></affiliation></author><author><name>LIYING YANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education) and School of Materials Science and Engineering, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300384</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tianjin Key Lab for Photoelectric Materials and Devices</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin Key Lab for Photoelectric Materials and Devices</wicri:noRegion></affiliation></author><author><name>SHOUGEN YIN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education) and School of Materials Science and Engineering, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300384</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tianjin Key Lab for Photoelectric Materials and Devices</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin Key Lab for Photoelectric Materials and Devices</wicri:noRegion></affiliation></author><author><name>JUN WEI</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Singapore Institute of Manufacturing Technology, 71 Nanyang Drive</s1><s3>SGP</s3><sZ>8 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore Institute of Manufacturing Technology, 71 Nanyang Drive</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Advanced Materials and Printed Electronics Center, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300384</wicri:noRegion></affiliation></author><author><name>FENGLING ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education) and School of Materials Science and Engineering, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300384</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Biomolecular and Organic Electronics, Center of Organic Electronics, Department of Physics, Chemistry and Biology (IFM), Linköping University</s1><s2>58183 Linköping</s2><s3>SWE</s3><sZ>9 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>58183 Linköping</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0093587</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0093587 INIST</idno><idno type="RBID">Pascal:13-0093587</idno><idno type="wicri:Area/Main/Corpus">001241</idno><idno type="wicri:Area/Main/Repository">000704</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term><term>Butyric acid</term><term>Control device</term><term>Conversion rate</term><term>Energy conversion</term><term>Ester</term><term>Exciton</term><term>Fill factor</term><term>Fullerene compounds</term><term>Growth from solution</term><term>ITO layers</term><term>Indium oxide</term><term>Lithium fluoride</term><term>Mirror</term><term>Nanosheet</term><term>Open circuit voltage</term><term>Organic solar cells</term><term>Performance evaluation</term><term>Polymer blends</term><term>Short circuit currents</term><term>Silver</term><term>Solar cell</term><term>Styrenesulfonate polymer</term><term>Surface plasmon</term><term>Thickness</term><term>Thiophene derivative polymer</term><term>Three dimensional model</term><term>Tin addition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Plasmon surface</term><term>Cellule solaire organique</term><term>Méthode en solution</term><term>Modèle 3 dimensions</term><term>Miroir</term><term>Evaluation performance</term><term>Epaisseur</term><term>Couche ITO</term><term>Addition étain</term><term>Tension circuit ouvert</term><term>Courant court circuit</term><term>Facteur remplissage</term><term>Conversion énergie</term><term>Taux conversion</term><term>Organe commande</term><term>Couche active</term><term>Exciton</term><term>Cellule solaire</term><term>Argent</term><term>Oxyde d'indium</term><term>Styrènesulfonate polymère</term><term>Thiophène dérivé polymère</term><term>Mélange polymère</term><term>Ester</term><term>Acide butyrique</term><term>Composé du fullerène</term><term>Fluorure de lithium</term><term>ITO</term><term>LiF</term><term>Nanofeuille</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Argent</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The silver nanosheets (AgNSs) prepared via normal silver mirror reaction were used to improve the performance of organic solar cells. AgNSs with a size of about 100 nm in width and 10 nm in thickness formed a 3-D network on an indium tin oxide (ITO) surface. Organic solar cells with a structure of ITO/ AgNSs/poly(3,4-ethylene dioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/poly(3-hexylthiophene) and [6,6]-phenyl C<sub>61</sub> butyric acid methyl ester (P3HT:PC<sub>61</sub>BM)/LiF/Al exhibited an open circuit voltage (V<sub>oc</sub>) of 0.60 ±0.01 V, short circuit current density (J<sub>sc</sub>) of 11.16±0.08 mA/cm<sup>2</sup>, a fill factor (FF) of 53.69 ± 0.92%, and power conversion efficiency (PCE) of 3.60 ± 0.06%. The PCEs of organic solar cells with 3-D AgNSs layers were 1.29 times that of the control device without 3-D AgNSs layer. We attributed the improvement of the efficiency to localized surface plasmon resonance (LSPR) induced by the 3-D network of AgNSs, which enhanced the light harvest of active layers, increased the probability of exciton generation and dissociation.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>109</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Plasmon-enhanced organic solar cells with solution-processed three-dimensional Ag nanosheets</s1></fA08><fA11 i1="01" i2="1"><s1>CHUNYUMA</s1></fA11><fA11 i1="02" i2="1"><s1>WENJING QIN</s1></fA11><fA11 i1="03" i2="1"><s1>XINRUI XU</s1></fA11><fA11 i1="04" i2="1"><s1>MINGYANG LI</s1></fA11><fA11 i1="05" i2="1"><s1>XUESONG HAN</s1></fA11><fA11 i1="06" i2="1"><s1>LIYING YANG</s1></fA11><fA11 i1="07" i2="1"><s1>SHOUGEN YIN</s1></fA11><fA11 i1="08" i2="1"><s1>JUN WEI</s1></fA11><fA11 i1="09" i2="1"><s1>FENGLING ZHANG</s1></fA11><fA14 i1="01"><s1>Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education) and School of Materials Science and Engineering, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Tianjin Key Lab for Photoelectric Materials and Devices</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Singapore Institute of Manufacturing Technology, 71 Nanyang Drive</s1><s3>SGP</s3><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>Advanced Materials and Printed Electronics Center, Tianjin University of Technology</s1><s2>Tianjin 300384</s2><s3>CHN</s3><sZ>8 aut.</sZ></fA14><fA14 i1="05"><s1>Biomolecular and Organic Electronics, Center of Organic Electronics, Department of Physics, Chemistry and Biology (IFM), Linköping University</s1><s2>58183 Linköping</s2><s3>SWE</s3><sZ>9 aut.</sZ></fA14><fA20><s1>227-232</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000182524870320</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0093587</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The silver nanosheets (AgNSs) prepared via normal silver mirror reaction were used to improve the performance of organic solar cells. AgNSs with a size of about 100 nm in width and 10 nm in thickness formed a 3-D network on an indium tin oxide (ITO) surface. Organic solar cells with a structure of ITO/ AgNSs/poly(3,4-ethylene dioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/poly(3-hexylthiophene) and [6,6]-phenyl C<sub>61</sub> butyric acid methyl ester (P3HT:PC<sub>61</sub>BM)/LiF/Al exhibited an open circuit voltage (V<sub>oc</sub>) of 0.60 ±0.01 V, short circuit current density (J<sub>sc</sub>) of 11.16±0.08 mA/cm<sup>2</sup>, a fill factor (FF) of 53.69 ± 0.92%, and power conversion efficiency (PCE) of 3.60 ± 0.06%. The PCEs of organic solar cells with 3-D AgNSs layers were 1.29 times that of the control device without 3-D AgNSs layer. We attributed the improvement of the efficiency to localized surface plasmon resonance (LSPR) induced by the 3-D network of AgNSs, which enhanced the light harvest of active layers, increased the probability of exciton generation and dissociation.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Plasmon surface</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Surface plasmon</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Plasmón superficie</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire organique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Organic solar cells</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Méthode en solution</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Growth from solution</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Método en solución</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Modèle 3 dimensions</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Three dimensional model</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Modelo 3 dimensiones</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Miroir</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Mirror</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Espejo</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Epaisseur</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Thickness</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Espesor</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Couche ITO</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>ITO layers</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Addition étain</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Tin addition</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Adición estaño</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Tension circuit ouvert</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Open circuit voltage</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Courant court circuit</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Short circuit currents</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Facteur remplissage</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Fill factor</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Conversion énergie</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Energy conversion</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Conversión energética</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Taux conversion</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Conversion rate</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Factor conversión</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Organe commande</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Control device</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Órgano mando</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Couche active</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Active layer</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Capa activa</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Exciton</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Exciton</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Excitón</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Solar cell</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Célula solar</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Argent</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Silver</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Plata</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Indium oxide</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Indio óxido</s0><s5>23</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Styrènesulfonate polymère</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Styrenesulfonate polymer</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Estireno sulfonato polímero</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Mélange polymère</s0><s5>26</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Polymer blends</s0><s5>26</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Ester</s0><s5>27</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Acide butyrique</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Butyric acid</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Butírico ácido</s0><s2>NK</s2><s5>28</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Composé du fullerène</s0><s5>29</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Fullerene compounds</s0><s5>29</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Fluorure de lithium</s0><s5>30</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Lithium fluoride</s0><s5>30</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Litio fluoruro</s0><s5>30</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>LiF</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>Nanofeuille</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="30" i2="X" l="ENG"><s0>Nanosheet</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>063</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000704 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000704 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0093587
|texte= Plasmon-enhanced organic solar cells with solution-processed three-dimensional Ag nanosheets
}}
| This area was generated with Dilib version V0.5.77. |  |